datasheet tr 2n5551

Datasheet: Description: Semtech Corporation: 2N5551: 131Kb / 2P: NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???? GUANGDONG HOTTECH INDUS... 2N5551: 185Kb / 2P: Plastic-Encapsulate Transistors NXP Semiconductors: 2N5551: 59Kb / 7P: NPN high-voltage transistors 2004 Oct 28: Weitron Technology ... DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. handbook, halfpage 1 2 3 MAM279 1 1 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS CHARACTERISTICS DATA SHEET www.onsemi.com NPN General-Purpose Amplifier 2N5551 Description This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers. Features These Devices are Pb−Free, • Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Note 1) The 2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. It also has decent switching characteristics (Transition frequency is 100MHz) hence can amplify low-level signals. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. Datasheet: Description: GUANGDONG HOTTECH INDUS... 2N5551: 185Kb / 2P: Plastic-Encapsulate Transistors ON Semiconductor: 2N5551: 188Kb / 6P: mplifier Transistors(NPN Silicon) June, 2004 ??Rev. 3: NXP Semiconductors: 2N5551: 59Kb / 7P: NPN high-voltage transistors 2004 Oct 28: Weitron Technology: 2N5551: 171Kb / 4P: NPN Transistors Tiger ... Datasheet - 2N5551HR - Rad-Hard 160 V, 0.5 A NPN bipolar transistor. Contents. 1 Electrical ratings ..................................................................2. 2 Electrical characteristics...........................................................3. 2.1. Datasheet: Description: Bruckewell Technology L... 2N5551: 215Kb / 3P: HIGH VOLTAGE SWITCHING TRANSISTOR ON Semiconductor: 2N5551: 188Kb / 6P: mplifier Transistors(NPN Silicon) June, 2004 ??Rev. 3: Silicon Supplies: 2N5551: 1Mb / 4P: NPN Transistor Bare Die Rev 1.1 22/12/21: Avic Technology: 2N5551: 47Kb / 1P: NPN General Purpose Amplifier ... 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Pada dasarnya, transistor 2n5551 dapat digantikan dengan jenis transistor NPN lainnya dengan karakteristik yang sama. Yang perlu diperhattikan ketika kita mencari persamaan transistor 2n5551 adalah tegangan maksimum dan arus pada transistor pengganti tersebut. Jangan sampai lebih rendah dari tr 2n5551 karena dapat menyebabkan transistor ... package. NPN complement: 2N5551. PINNING PIN DESCRIPTION 1 collector 2 base 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM280 1 2 3 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 ... Description. Other Names. 2368-2N5551. Standard Package. 1. Order today, ships today. 2N5551 – Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92 from NTE Electronics, Inc. Pricing and Availability on millions of electronic components from Digi-Key Electronics. This article will be divided into below parts: 2N5551 Datasheet2N5551 Pinout2N5551 Equivalent2N5551 Transistor Applications, and so on. Features of 2N5551 Transistor. The High DC Current Gain (hFE) is usually 80 when IC = 10mA. Continuous Collector Current : 600mA. The voltage of the Collector-Emitter: 160 V. The voltage of Collector-Base: 180V. 2n5401n.pdf. 2N5401NSemiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : VCE (sat)=-0.5V (MAX.) Complementary pair with 2N5551N Ordering Information Type NO. 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features